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TOSHIBA
Discrete Semiconductors
2SK1544
Field Effect Transistor Silicon N Channel MOS Type (-MOS III.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
Features * Low Drain-Source ON Resistance - RDS(ON) = 0.15 (Typ.) * High Forward Transfer Admittance - Yfs = 21S (Typ.) * Low Leakage Current - IDSS = 300A (Max.) @ VDS = 500V * Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25C)
CHARACTERISTIC
Drain-Source Voltage Drain-Gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25C) Channel Temperature Storage Temperature Range
Industrial Applications
Unit in mm
SYMBOL
VDSS VDGR VGSS ID IDP PD Tch Tstg
RATING
500 500 30 25 100 200 150 -55 ~ 150
UNIT
V V V A
W C C
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient
SYMBOL
Rth(ch-c) Rth(ch-a)
MAX.
0.625 35.7
UNIT
C/W C/W
This transistor is an electrostatic sensitive device. Please handle with care.
TOSHIBA CORPORATION
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2SK1544
Electrical Characteristics (Ta = 25C)
CHARACTERISTIC
Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time
SYMBOL
IGSS IDSS V(BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff
TEST CONDITION
VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA ID = 13A, VGS = 10V VDS = 10V, ID = 13A VDS = 10V, VGS = 0V, f = 1MHz
MIN.
- - 500 1.5 - 10 - - - - - - -
TYP.
- - - - 0.15 21 3700 400 920 185 240 250 590
MAX.
100 300 - 3.5 0.20 - 5000 750 1300 370 480 500 1180
UNIT
nA A V V S pF
ns
Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge
Qg Qgs Qgd VDD = 400V, VGS = 10V, ID = 25A
- - -
150 70 80
250 - - nC
Source-Drain Diode Ratings and Characteristics (Ta = 25C)
CHARACTERISTICS
Continuous Drain Reverse Current Pulse Drain Reverse Current Diode Forward Voltage Reverse Recovery Time Reverse Recovered Charge
SYMBOL
IDR IDRP VDSF trr Qrr
TEST CONDITION
- - IDR = 25A, VGS = 0V IDR = 25A, VGS = 0V dIDR/dt = 100A/s
MIN.
- - - - -
TYP.
- - - 780 9.8
MAX.
25 100 -1.6 - -
UNIT
A A V ns C
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TOSHIBA CORPORATION
2SK1544
TOSHIBA CORPORATION
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2SK1544
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f Notes
The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
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